Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature.
نویسندگان
چکیده
Core/shell-like n-type InAs nanowire phototransistors based on majority-carrier-dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self-assembled near-surface photogating layer, forming a built-in electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature.
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ورودعنوان ژورنال:
- Advanced materials
دوره 26 48 شماره
صفحات -
تاریخ انتشار 2014